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Graphene and carbon nanotube based photonic devices, including light emitters and high bandwidth photodetectors are demonstrated. The potential of these truly nanometer scale, 2-dimensional (graphene) and quasi 1-dimensional (nanotube) carbon materials in photonics are discussed.
In this paper, we present a new approach for making active carbon nanotube (CNT) electrical devices and demonstrate the first aligned CNT array field effect transistors (FET) from 99% pure separated semiconducting nanotubes. Through evaporation-driven deposition of predominantly semiconducting nanotubes from the liquid phase, we have fabricated aligned, thin-film CNT devices with high on-state currents...
In the last few decades, the semiconductor industry has been able to maintain steady improvements of device performance by the scaling of silicon-based devices. However, this approach will soon meet both scientific and technical limits, and there have been tremendous efforts to seek alternative device technologies. Some approaches involve moving away from traditional charge-based electronics, such...
We have integrated an electrically excited light emitter using a single SWCT with a planar photonic lambda/2-cavity. The spectral width of cavity-controlled emission is 7 times narrower than the free-space emission from the same SWCT.
The impact of different work function metal gates on the performance of individual nanotube transistors and ultimately an entire nano-circuit is presented. The use of an Al-gate, in the case of a carbon nanotube device, translates directly into a threshold-voltage shift relative to a Pd-gated FET, corresponding to the work function difference between the two metal gates. In this way, a CMOS-type 5-stage...
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