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I-fuse is a fuse-based technology having (a) 1R1D cell, (b) limited programming below a critical current, and (c) small cell to improve program efficiency to pass qualification at 300°C for 4,290 hours. Test structures consist of single 1R1D structure and mini-arrays are used to characterize (a) critical current, (b) diode characteristics, and (c) cell current distribution.
I-fuse∗ is a disruptive fuse-based OTP technology based on true electromigration with excellent manufacturability. Conventional ways of programming a fuse is by applying a large current to break the fuse such that the program behavior is like an explosion. The debris created during the explosion may micro-bridge again and grow back to cause several reliability issues. By limiting the programming current...
This paper presents a highly optimized 32Kb electrical fuse memory in 32nm CMOS with 1.25µm2 small cell, the smallest cell ever published. This macro has low program current of 6mA at 2.5V for 0.5?µs, high-gain sense amplifier to achieve 700mV Vddmin, and parallel/serial interfaces for high density or low pin-count applications.
A 15 μm2 cell 4 Kb electrical fuse memory is designed in 90 nm CMOS using core devices only. The N+ 8-sq asymmetric fuses are used to enhance fuse uniformity, reliability, and aggregate electro-migration. High-gain cascade amplifiers sense small resistance differences to achieve a 2.25 V program voltage in 1 mus. A sufficient design window is derived and verified by using on-chip resistance monitor...
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