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Using the non-local empirical pseudopotential method (bandstructure), full-band Monte-Carlo simulations (transport), self-consistent Poisson-Schrodinger (electrostatics) and detailed band-to-band-tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of surface/channel orientation, uniaxial- and biaxial-strain, band-structure, mobility, and high-field transport on the...
Based on the complex bandstructure obtained by local empirical pseudopotential method (LEPM), we have developed a band to band tunneling model (BTBT), which captures band structure information, all possible transitions between different valleys, energy quantization and quantized density of states. Theoretical model is verified by experimental study on tunnel diodes on various semiconductors. BTBT...
Channel materials with high mobility are needed for future nodes to meet the ITRS requirements of MOSFETs. In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si
For the first time, the tradeoffs between drive current (Ion ), intrinsic delay (tau), band-to-band tunneling (BTBT) leakage and short channel effects (SCE) have been systematically compared in futuristic high mobility channel materials, like strained-Si (0-100%), strained-SiGe (0-100%) and relaxed-Ge. The optimal channel materials and device structures for nanoscale p-MOSFETs are discussed through...
The performance limits of ultra-thin body double-gated (DG) III-V channel MOSFETs are presented in this paper. An analytical ballistic model including all the valleys (Gamma-, X- and L-), was used to simulate the source to drain current. The band-to-band tunneling (BTBT) limited off currents, including both the direct and the indirect components, were simulated using TAURUStrade. Our results show...
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