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A transient leakage current was measured as a function of time for thin (~9 nm) strontium titanate (STO) capacitor dielectrics with RuOx as a bottom electrode and TiN as a top electrode at different temperatures under constant direct current (DC) bias stress. With the space-charge-limited (SCL) current theory, the mobility of oxygen vacancies (VO) and the activation energy (E0) of VO were extracted...
The correlation of discrete gate and drain current fluctuations is revealed in nanoscaled SiON pFETs and nFETs, demonstrating that discrete trapping and detrapping events in the same single states are responsible of both ID and IG random telegraph noise (RTN). The high and low gate current IG-RTN levels are independent of temperature but the switching rates thermally activated indicating that the...
In this work we examine the effect of nitrogen incorporation on the defect generation behavior in HfSiON gate dielectric layers. We show that nitrogen effectively passivates pre-existing defects in the HfSiO, but the effect is quickly reversed during stress leading to high levels of SILC and NBTI.
In this work we present a novel trap spectroscopy based on stress induced leakage current measurements for constant voltage stress and substrate hot carrier injection stresses in nMOSFET devices. Peaks in the stress induced leakage current at several gate voltages are attributed specifically to defects in the bulk and at the interface by using the substrate hot electron injection technique to specifically...
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