Search results for: A. Matoba

Items from 1 to 6 out of 6 results

chapter

Interconnecting multi-vendor multi-hop WLAN and internet via hotspot

A. Matoba, Moo Wan Kim

2009 11th International Conference on Advanced Communication Technology > 2 > 1403 - 1405

2009 11th International Conference on Advanced Communication Technology

Multi-hop WLAN is convenient option to deploy tentative network while it doesn't support multi-vendor and it could be an issue to secure Internet connectivity for at tentative location. We propose wireless device which has both WLAN AP and client capabilities simultaneously. WLAN client interface doesn't have interoperability issue, and also it can be used to connect the multi-hop network to Internet...

chapter

Strain and surface roughness control of SiGe layer deposited by ion beam sputtering

A. Matoba, K. Sasaki, M. Kumeda

2008 9th International Conference on Solid-State and Integrated-Circuit Technology > 677 - 680

2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

Strain-relaxed SiGe layer toward the preparation of strain Si layer was prepared by using ion-beam sputtering technique. Samples prepared at acceleration voltage of 300 V show high relaxation regardless of the film thickness and growth temperature, while the surface roughness increases largely with increasing thickness. As for the case of 500 V, although the relaxation and roughness increase with...

article

A survey of Moyamoya disease in Hawaii

J.F Graham, A Matoba

Clinical Neurology and Neurosurgery > 1997 > 99 > Supplement 2 > S31-S35

Moyamoya disease (MMD) is a rare entity in the US with a few retrospective series and sporadic cases reported in the US and North America. Although it is known that MMD exists in all races, there is a predilection for people of Asian origin. Because of the relatively high percentage of Asians living in Hawaii, it was hypothesized that the estimated prevalence of MMD would be higher in Hawaii than...

article

Low-drive-voltage 8*8 Ti:LiNbO/sub 3/ switch with simplified tree structure

A. Matoba, H. Okayama, R. Shibuya, T. Ishida

Electronics Letters > 1989 > 25 > 2 > 165 - 166

A strictly nonblocking 8*8 switch matrix was fabricated with a simplified configuration. In this configuration, 40 directional coupler switches and 24 passive combiners are integrated in five ranks in a single chip. Owing to the reduced number of ranks, a switch element as long as 9 mm can be incorporated and a switching voltage of 11 V was obtained at a wavelength of 1.3 mu m.<<ETX>>

article

Optically biased LiNbO₃ Δβ reversal directional coupler switch

H. Okayama, A. Matoba, R. Shibuya, T. Ishida

Electronics Letters > 1987 > 23 > 21 > 1145 - 1147

A Ti: LiNbO₃ Δβ reversal directional coupler switch with built-in optical bias is demonstrated. Optical bias is introduced by alternating the width of coupled waveguides. Drive voltages can be reduced without significant degradation of loss and crosstalk characteristics.

article

Reliability of 1.3 μm V-grooved inner-stripe laser diodes under high-power operation

S. Oshiba, A. Matoba, H. Horikawa, Y. Kawai, more

Electronics Letters > 1986 > 22 > 8 > 428 - 429

Aging tests of 1.3 μm laser diodes were performed under extremely high power levels up to 85% of the maximum CW output powers. We have verified high reliability under high power levels as high as 75% of the maximum CW output powers at room temperature. The median lifetime is estimated to be 7??10⁴ h at 75% of the maximum CW output power.

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Search results for: A. Matoba

Interconnecting multi-vendor multi-hop WLAN and internet via hotspot

Strain and surface roughness control of SiGe layer deposited by ion beam sputtering

A survey of Moyamoya disease in Hawaii

Low-drive-voltage 8*8 Ti:LiNbO/sub 3/ switch with simplified tree structure

Optically biased LiNbO3 Δβ reversal directional coupler switch

Reliability of 1.3 μm V-grooved inner-stripe laser diodes under high-power operation

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Optically biased LiNbO₃ Δβ reversal directional coupler switch