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Full CMOS compatible microdisk LASERs have been fabricated on 200 mm SOI wafers. CW operation with a sub-mW threshold is obtained with low voltage operation. Coupling the microdisk to a pseudo cavity, formed by a photonic crystal and the coupled waveguide itself, we also demonstrate mode hopping and multimode emission thanks to an active control of its optical paths.
III–V Microdisk lasers have been fabricated on a 200 mm CMOS pilot line. In a first part lasers are coupled to Si waveguides and different coupling schemes are investigated. In a second section, lasers are coupled at two different points to modulate their emission, through an active control of the coupling losses. Two devices with different coupling schemes are experimentally studied, and their properties...
Integrated components for optical networks-on-chip, including III-V microdisk lasers, photodetectors, and wavelength selective circuits, are all demonstrated using a complementary metal-oxide-semiconductor (CMOS) compatible III-V/silicon-oninsulator integration technology at 200mm wafer scale.
Efficient compact sources are necessary to consider on chip optical interconnections in integrated circuits. Properties of III–V microdisk light amplification by stimulated emission of radiation (LASERs) coupled to Si waveguides and fabricated on a 200-mm complementary metal–oxide–semiconductor (CMOS) pilot line are investigated.<?Pub _bookmark Command="[Quick Mark]"?>
Through heterogeneous integration of III-V materials on Silicon, new optical functions on Si circuits have been studied for the last decade. An important issue is the development of efficient laser sources, for both guided and free space emission. Low threshold combined to small footprints are required for silicon photonics applications.
An optimization of coupling conditions between microdisk based lasers and waveguides is presented using an analytical model. Adding an external passive cavity can increase mode selectivity and get a single, unidirectional and tunable output waveguide.
Large scale integration of optical functions on Silicon has become of a great interest in the last years. Through heterogeneous integration of III-V materials on Silicon, new building blocks are currently studied. An important issue is the development of efficient laser sources, for both guided and free space emission. Low threshold combined to small footprints are required for silicon photonics applications...
Using III-V bonding on silicon wafers, thin microdisk based lasers are well adapted to introduce optical functionalities in integrated circuits. For mass production and implementation easiness, electrically driven sources are required, and consequently metal based elements and absorbing medium are necessary. In order to lower absorption losses, we propose to optimize the geometry of contacts. After...
Using die to wafer bonding of InP membranes onto silicon wafers, micro laser sources and their contacts can be fabricated in compliance with the CMOS microelectronics standard processes.
Electrically driven InGaAsP based microdisk lasers are bonded on a 200 mm SOI Wafer with submicron Silicon waveguides. Experimental results at room temperature of electrically pumped lasers coupled to a Si waveguide are exposed.
By die to wafer bonding of InP heterostructure on 200 mm wafer, microelectronics type fabrication of mu source has been achieved using DUV lithography. LED emission was only obtained due to slanted etching of the cavity.
An electrically driven microlaser based on a thin InP based microdisk transferred onto silicon is proposed. The technological procedure is described and first experimental results, showing a laser threshold current of 1.5 mA are exposed
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