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The RF linearity characteristics of complementary (npn + pnp) SiGe HBTs are investigated with respect to bias and frequency dependence, for the first time. The differences in distortion performance between npn and pnp SiGe HBTs are examined. Overall, at low bias currents (e.g., for minimum RF noise), both devices exhibit similar linearity performance and power gain, while for higher bias currents...
This paper presents analysis of RF safe-operating- area of aggressively-biased cascode SiGe HBT power amplifier cores under large-signal operating conditions. It is demonstrated that as VC and |ZL| increase, the RF power threshold to cause catastrophic device failure is reduced. Comparisons between calculated results and measured data show excellent agreement.
We present a high-dynamic range (HDR) X-band LNA implemented in silicon-germanium (SiGe) technology targeting high-performance radar and wireless communications applications. To our knowledge, this is the first Si-based LNA to achieve over 30 dB gain, 30 dBm of OTOI, and 2 dB noise figure at X-band. System-level performance simulations clearly show the benefits of using HDR LNAs in the receive chain...
Common-base (CB) linearity performance of insensitive to these various parameters. However, at high currents, these factors each play a significant role in determining overall CB linearity. We show that CB linearity performance of SiGe HBTs can be well-predicted by the standard VBIC model.
The degradation of SiGe HBTs due to mixed-mode DC and RF stress (simultaneous application of high current and voltage) has been modeled for the first time. State-of-the-art 200 GHz SiGe HBTs were first characterized, and then DC and RF stressed. Using TCAD simulations and calculations based upon a reaction-diffusion model, the excess base current due to stress was modeled as a function of the stress...
Power performance, linearity, and reliability are investigated for aggressive VC bias (i.e., under strong base-current reversal and pinch-in) on cascode SiGe HBTs, in order to determine the influence of avalanche effects on PA performance and reliability. Moderate gain and linearity degradation are associated with excessive VC bias (pinch-in), and dynamic stress at high VC shows behavior similar to...
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