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As device dimensions shrink into the nanometer range, power and performance constraints prohibit the longevity of traditional MOS devices in circuit design. FinFETs, a quasi-planar double-gated device, has emerged as a replacement. While flnFETs provide promising electrostatic characteristics, they have the potential to suffer from significant self heating. We study in this paper self heating in multi-fin...
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive current. We investigate in this paper the gate sizing of finFET devices, and we provide a comparison with 32nm bulk CMOS. Wider finFET devices are built utilizing multiple parallel fins between the source and drain. Independent...
While device dimensions continue to shrink into the sub-90nm range, device self-heating emerges as a pressing problem, affecting both mobility and leakage current. Coupled electro-thermal simulation can be used to assess the impact. Simulation, however, is time consuming. Furthermore, it does not give insight into the device's performance robustness against self-heating. We propose in this paper a...
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