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Using all silicon photonic components, including an electrically-pumped hybrid silicon laser and a high-Q ring resonator, photon pairs with non-classical correlations were generated at room temperature near 1310 nm wavelengths.
We design and fabricate an efficient broadband grating coupler (GC) on a 400nm-thick silicon-on-insulator (SOI) wafer. The measured coupling loss is 2.7dB when coupling to a single-mode fiber (SMF) at 1310nm wavelength with TE polarization. 1dB-full-width and back-reflection are determined to be 30nm and −30dB, respectively.
We demonstrate a 4λx12.5Gbps Silicon Photonics CWDM link integrating all optical components, electronics, and packaging technologies required to form the link.
Utilizing two-photon-absorption effect, we demonstrate an in-situ scheme for monitoring optical power using p-i-n diode in silicon rib-waveguides for integrated photonics circuits. We show that a responsivity of 5.9µA/mW2 can be reached with 15V reverse-bias for the square-law detector. An example of using such detectors for accurate waveguide propagation loss measurements is given.
Summary form only given. We will provide an overview of silicon photonics research at Intel and discuss the key building blocks needed as well as challenges and practical issues for large scale photonic integration based on silicon platform.
We report a wavelength conversion efficiency of -5.5 dB via four-wave-mixing in a low-loss 2.5 cm long sub-micron silicon-on-insulator rib waveguide. The impact of non-linear absorption and waveguide dimensions on the conversion efficiency is studied.
We characterize a silicon based wavelength converter using a commercial semiconductor amplifier based wavelength converter as a benchmark. Results show that silicon achieves −5.5dB efficiency, offers broader conversion bandwidth, higher OSNR and negligible channel crosstalk.
Using a silicon waveguide based optical phase conjungator, mid-span dispersion compensation has been demonstrated by transmitting wavelength multiplexed 4times10 Gb/s data over 320 km standard fiber with < 0.3 dB power penalty at bit error rate of 10-9.
Taking advantage of the high optical nonlinearity and strong light confinement in silicon waveguides, chip-scale nonlinear devices such as Raman lasers, amplifiers, and wavelength converters are realized. Performance and application potential of these devices are presented.
We characterize a silicon based wavelength converter using a commercial semiconductor amplifier based wavelength converter as a benchmark. Results show that silicon achieves -5.5 dB efficiency, offers broader conversion bandwidth, higher OSNR and negligible channel crosstalk.
In this paper, a chip-scale Raman silicon laser and amplifier based on a ring resonator architecture are presented. Lasing threshold and efficiency are significantly improved from the previous experiments. Much lower pump power and smaller foot print are needed for the ring resonator amplifier compared to Raman amplifier in linear configuration due to the resonance enhancement effect. The ring resonator...
We report efficient wavelength conversion of a high speed signal at 40 Gb/s via four-wave mixing in silicon-on-insulator rib waveguides. Results give an efficiency of -8.6 dB, and the converted signal shows good signal integrity.
Silicon photonics has made rapid progress in recent years achieving several key breakthroughs. Chip-scale silicon lasers and amplifiers based on stimulated Raman scattering have been successfully demonstrated. Recent development of Raman silicon lasers and amplifiers based on ring resonator architecture enables dimension scalability and monolithic integration with other photonics components
Using reverse biased p-i-n diode structure, we efficiently reduced nonlinear absorption and achieved continuous-wave lasing in silicon waveguide cavities based on stimulated Raman scattering. We report here the lasing characteristics for different laser cavity configurations.
Silicon photonics offers an opportunity for low cost opto-electronic solutions for applications ranging from telecommunications down to chip-to-chip interconnects. The presentation will give an overview of silicon photonics research at Intel and discuss some of the applications and challenges with building photonic devices from silicon.
Achieving light amplification and lasing in silicon is one of most challenging goals in silicon-based optoelectronics. As a nonlinear optical effect, stimulated Raman scattering (SRS) provides a means to generate optical gain in silicon. Recent results of a nonlinear optics approach to optical amplification and lasing in silicon at the Photonics Technology Laboratory of Intel Corporation are reviewed...
Silicon photonics has made rapid progress in recent years achieving several key breakthroughs. In particular, chip-scale silicon lasers and amplifiers based on stimulated Raman scattering have been successfully demonstrated in continuous wave operation
This presentation will give an overview of research being done at Intel in the area of silicon photonics. Recent breakthroughs in high speed optical modulation and Raman amplification in SOI waveguides will be discussed
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