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In this article, we present a sandwiched structure for measuring interface thermal resistance of metal-dielectric layers. Common used metal thin films in MEMS including chromium, nickel, aluminum, titanium, and platinum, were sandwiched in between two SiO2 layers. Measurement results showed the interface thermal resistance of metal/dielectric layers were narrowly distributed over the range of 2.5~3...
Two bistable multivibrators based on the operational transresistance amplifier (OTRA) are presented. The first topology consists of only one OTRA and a positive feedback network. The second multivibrator utilises a single-pole double-throw (SPDT) switch along with a bias voltage source to shift the hysteresis loop into either the right-half-part or the left-half-part of the nui-nuo plane. These two...
Whispering-gallery modes and radial modes in quantum-dot microdisks were observed at 77 K and RT, respectively. The quality factor at 77 K is determined to be larger than 14000. The radial modes can be suppressed with embedding a hole at the microdisk center.
Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge + -implanted (001)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence...
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