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We demonstrate ultralow leakage current AlGaN/GaN Schottky-barrier diodes (SBDs) based on a 3-D anode contact. In contrast to conventional AlGaN/GaN SBDs, this new device forms a Schottky contact directly to the 2-D electron gas (2-DEG) at the sidewalls of the 3-D anode structure to improve its turn-on characteristics. In addition, this device integrates an insulated trigate MOS structure to reduce...
A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off-state drain leakage current of 0.6 µA/mm at a breakdown voltage of 565 V while maintains a low on-resistance of 2.1 mΩ·cm2. The new device has an on/off...
Between 5 and 10% of the world's electricity is wasted as dissipated heat in the power electronic circuits needed, for example, in computer power supplies, motor drives or the power inverters of photovoltaic systems. This paper describes how the unique properties of GaN enables a new generation of power transistors has the potential to reduce by at least an order of magnitude the cost, volume and...
Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate E-mode devices. For example, gate recess can be applied to conventional AlGaN/GaN HEMTs to achieve E-mode operation. However, these devices have very low threshold voltage and large...
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