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In this paper, we study the thermal characteristics of the bMPI-based 1T-DRAM cell. For a bMPI-FET, it can not only improve the thermal stability about 38% compared with the bPDSOI-FET due to the S/D-tied scheme, but also maintain the desired short-channel characteristics due to the block oxide structure.
In this work, a novel device called dual-channel body-tied (DCBT) MOSFET is proposed. According to numerical simulations, the DCBT MOSFET can reduce the lattice temperature about 51.6% in top and 53.8% in bottom channel, respectively, while maintain the desirable short-channel characteristics, compared with the conventional non-body-tied DC structure.
In this paper, novel FinFET device structures with its bodies been connected together have been for the first time proposed by three-dimensional (3-D) simulation. The short-channel characteristics of threshold voltage (VTH), drain induced barrier lowering (DIBL), and on-off ratio current performance have been examined and explained in this paper. Also, the novel structures show the desired characteristic...
In this work, our main aim is to investigate the effects of source/drain thickness on the characteristics of self-aligned quasi-silicon-on-insulator metal-oxide semiconductor field-effect transistor with pi-shaped semiconductor conductive layer. According to the simulation results, we found that the short-channel characteristics and self-heating are much sensitive to the source/drain thickness. A...
A novel device architecture-the self-aligned pi-shaped source/drain (S/D) ultrathin silicon-on-insulator (UTSOI) FET-is presented for the first time in the field of silicon-on-insulator (SOI) technology; this new device demonstrates how to decrease the self-heating effects in the SOI-based devices. Two-dimensional simulations show that the cost of building an S/D tie into the UTSOI-FET is a modest...
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