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25nm gate length bulk-planar SONOS-type memory, which has Si nanocrystalline layer between double tunnel oxides, shows excellent memory characteristics due to Coulomb blockade and quantum confinement in Si nanocrystals. A direct evidence of great advantage in trade-off between charge retention and w/e speed is shown experimentally, and it is shown that further device scaling and improvement are possible...
It is shown that, for 35 nm gate length, a silicon nitride trap memory using double junction tunneling can retain more than 4 decades memory window for 10 years in less than 9 volts w/e voltage, where 1E+6 w/e cycle endurance is attained simultaneously. This is due to Coulomb blockade and quantum confinement in Si nanocrystals lying between double tunnel oxides, and further improvement is possible...
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