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Aluminum-doped zinc oxide films (ZnO:Al) were deposited on Si wafers and glass substrates by dc magnetron sputtering from a ZnO target mixed with 2 wt% Al 2 O 3 for photovoltaic films. The effect of base pressure, additional oxygen, and substrate temperature were studied in detail. By dc magnetron sputtering at room temperature, the resistivity and the average transmittance in visible...
Despite many projections on the inevitable post-PVD evolution of interconnect technology, it remains PVD-based for liner-seed through 45 nm and perhaps farther, with an ALD process change the obvious next step perhaps followed by a switch from Ta to Ru. Cu size effects are not critical to low-level (1times) line RC and the biggest performance opportunity is with the high level fat lines. CA technology,...
Ta thin films were grown by plasma-enhanced atomic layer deposition (PE-ALD) on Si and SiO 2 substrates. The deposition processes and film properties were investigated as a function of various key growth kinetic parameters, including TaCl 5 exposure time, atomic hydrogen exposure time, hydrogen flow, and growth temperatures. The growth rate increases with increasing TaCl 5 ...
As interconnect features migrate towards sub-100 nm structures, BEOL thin film technologies are forced to change. PVD, followed by collimated and I-PVD, is limited by directionality as well as bias-sputter-induced bevel formation. CVD fixes some problems but is challenging for high purity, ultra-thin high aspect ratio films. Atomic Layer Deposition (ALD) replaces both of these technologies in the...
Physical sputtering techniques are characterized by a mostly isotropic deposition profile, which is useful for depositing films over steps, edges and lines. However, it fails for deposition into modest (>1:1) aspect ratio features due to overhang formation and subsequent void formation. A number of techniques have addressed this issue. Sputtering at high sample temperatures has been used to allow...
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