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The emergence of fan-out packaging for 5G and IoT applications has brought escalating performance concerns that arise from the proximity of radiating components such as antennas to lossy materials such as metals and silicon. These concerns also arise in wearable (“smart skin”) electronics where the human tissues act as the lossy substrate. Artificial magnetic conductors (AMC) are widely explored for...
In this paper, we measured and analyzed glass interposer power distribution network (PDN) resonance effects on a high-speed through glass via (TGV) channel for the first time. To verify the glass interposer PDN resonance effects on the TGV channel, glass interposer test vehicles were fabricated. With these test vehicles, glass interposer PDN impedance, channel loss, far-end crosstalk, and eye diagram...
This paper presents one of the first comprehensive studies comparing the electrical performance of through-silicon-vias (TSVs) in silicon with through-package-vias (TPVs) in glass, considering electromagnetic field distributions, 50 ohm impedance design, and the effect of via taper. First, the electric and magnetic field distributions were analyzed using a 3D EM solver (CST Microwave Studio) for the...
Ultrathin 3-D glass interposers with through-package vias at the same pitch as through-silicon vias (TSVs) have been proposed as a simpler and cheaper alternative to the direct 3-D stacking of logic and memory devices. Such 3-D interposers provide wide-I/O channels for high signal bandwidth (BW) between the logic device on one side of the interposer and memory stack on the other side, without the...
The electrical characteristics of silicon and glass interposer channel are heavily affected by the design of through silicon via (TSV) and through glass via (TGV). In this paper, we analyzed the overall signal integrity of glass and silicon interposer channel including through package via. To compare electrical property between silicon and glass, we simulated these channels in frequency-domain and...
2.5D integration based on interposer technologies provides high density integration and high system bandwidth. Among many materials for the interposer substrate, glass could be a promising material since it provides low signal loss and its ultra-thin thickness. When chips are stacked on the glass interposer, power distribution network impedance of 2.5D IC must be estimated, analyzed and optimized...
3D integration using a glass interposer and through glass via technologies is expected to improve the performance of a whole system significantly. However, due to the high quality factor of the glass substrate, the sharp impedance peaks on the Power Distribution Networks arise at the resonances. When the mode resonances occur, performance of a whole system could be degraded. Segmentation based impedance-estimation...
Double-sided 3D glass interposers and packages, with through package vias (TPV) at the same pitch as TSVs in Si, have been proposed to achieve high bandwidth between logic and memory with benefits in cost, process complexity, testability and thermal over 3D IC stacks with TSV. However, such a 3D interposer introduces power distribution network (PDN) challenges due to increased power delivery path...
Logic-to-memory interconnections by double-side mounting on ultra-thin 3D glass interposers with Through-Package-Vias (TPVs) achieves high bandwidth (BW) (>25.6GB per second), without the complex TSV processes in logic ICs, required for wide I/O 3D-IC stack. While this interposer/packaging technology offers several advantages including power delivery by enabling thick power-ground (P/G) planes,...
This paper presents a new active and passive integration concept called 3D IPAC (Integrated Actives and Passives) to address the power integrity in high-performance and multifunctional systems. The 3D IPAC consists of an ultra-thin glass module with through-vias and double-side integration of ultra-thin active and passive components to form functional modules. By integrating power ICs, storage capacitors...
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