The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, a novel 4H-SiC trench junction barrier Schottky diode (TkJBS) with high-k semi-insulating polycrystalline silicon (SIPOS) is proposed. By adopting the new high-k dielectric-trench structure, the peak electric field at the corner of P+ regions (COP) can be weakened significantly, and the device breakdown voltage (BV) is enhanced. The SiC TkJBS has a 60.7% higher BV and a 88.7% higher...
A novel temperature analysis method for compound semiconductor integrated circuits based on iteration algorithm has been presented. The iteration algorithm has been developed with efficient numerical calculation in MATLAB. This method has been applied to a simple module including 9 devices and the calculated temperature distribution has been compared to the simulated result by 3D simulation tool....
A comprehensive behavioral model of Track-and-Hold Amplifier (THA) based on GaAs HBT, implemented in MATLAB-SIMULINK platform, is presented in this paper. The main error sources of the holding capacitor and non-linear on-resistance are investigated, and the relative non-idealities are modeled. With the behavioral model, SIMULINK simulations were performed to analyze the non-ideal error sources and...
We report the characteristics of HfO2/Al2O3 gate dielectric nanometer-stacks deposited on InAlAs at 245 °C by atomic layer deposition. The annealing effect on the interface and electrical properties of stack films was investigated by X-ray photoelectron spectroscopy, and electrical measurements. It is demonstrated that the resultant of As2O3 during annealing is suppressed by Al2O3 layer. The annealed...
In this article, the effect of proton irradiation on the DC characteristic of InP/InGaAs heterojunction is studied with varying fluences and proton energies. The current-voltage (I–V) before and after proton irradiation are compared. The result indicates that higher device current is caused by lower energy proton irradiation and the increase of fluences for the proton energy less than 3MeV. The density...
Design of a 23-GHz cross-coupled voltage controlled oscillator (VCO) based on a 1µm GaAs heterojunction bipolar transistor (HBT) technology is reported in this work. This differential VCO employs a cross-coupled structure and a common-emitter (CE) configuration. Simulation and layout design are completed with simulation software ADS and cadence respectively. With VCC of 6V and dc power consumption...
A W-band two-stage amplifier MMIC has been developed using a InP-based high electron mobility transistor (HEMT) technology. The two-stage amplifier has been realized in combination with coplanar waveguide topology and cascode transistors, thus leading to a compact chip-size of 1.85 mm×0.932 mm and an excellent small-signal gain of 25.7 dB at 106 GHz. The successful design of the two-stage amplifier...
The growth and crystallization processes of Co20Fe50B30/MgO/Co20Fe50B30 magnetic tunnel junction structures are investigated with 2θ x-ray diffraction. By increasing thickness and proper annealing, the crystal structure of MgO has been improved. The results show important information for preparation of magnetic tunnel junction.
The effect of electrical stress on the Al2O3-based n-4H-SiC metal oxide semiconductor (MOS) capacitor with a thin SiO2 interfacial buffer layer (IBL) has been investigated. The electrical characteristics of MOS capacitors have been measured using capacitance-voltage (C-V), current-voltage (I-V) and charge trapping behavior of the films under constant voltage stressing (CVS) to understand the reliability...
A K-Band low phase noise voltage controlled oscillator (VCO) using balanced π-feedback with 1-um GaAs heterojunction bipolar transistor (HBT) process is reported in this paper. In this VCO, phase noise is −116.0 dBc/Hz at 1 MHz offset and tuning frequency is from 19.62 to 20.23 GHz. The differential outputs are also provided from the VCO due to the use of balanced π-feedback. The overall dc power...
A wide input range of high frequency Phase Detector(PD) is designed based on WIN Foundry 1μm GaAs HBT technology. The Gilbert Cell topology, the core of the PD, is used in PD design which can be operated from 500MHz to 20GHz with supply voltage of 7 V. The output voltage range in the wide frequency range is higher than 1V with phase changes from −180º to 180º, even reaches 2.5V at 10GHz.
In this paper, The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs has been investigated. The results measured by X-ray photoelectron spectroscopy show that the presence of ZnO can effectively suppress the formation of oxides at the interface between the GaAs and Al2O3. Using Terman method, the interface trap density has been extracted from C-V curves. It is found that the ZnO...
In this paper the modeling results for a given InGaAs/InP DHBTs technology (1×15μm2 emitter area) have been shown with two advanced compact models, VBIC and Agilent model. Shortcomings of these models have been pointed out and an improved model to overcome these shortcomings has been discussed.
The growth and crystallization processes of Co20Fe50B30/MgO/Co20Fe50B30 magnetic tunnel junction structures is investigated with 2θ x-ray diffraction. A MgO layer with thickness of 1.5nm was grown on an amorphous CoFeB layer, and then was crystallized. By proper annealing, the crystal structure of MgO has been improved. The results show important information for preparation of magnetic tunnel junction.
A simplified VBIC model for InP double heterojunction bipolar transistors(DHBTs) is presented. It is implemented in Agilent ADS circuit simulator, using a Symbolically Define Device(SDD), and verified by comparing the simulated results with measured data of DC and multi-bias small-signal S parameters for a InGaAs/InP DHBT.
Power devices based upon silicon technology are rapidly approaching their theoretical limits of performance. Consequently, it will be necessary to develop devices from other materials in the future in order to reduce power losses in high frequency systems and in order to achieve high efficiencies. This paper presents a DC-DC boost converter based on SiC MOSFET and SiC Schottky Barrier Diode(SBD)....
The effects of gamma irradiation on Gallium-Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) is reported. DC and Radio Frequency (RF) performance are investigated for gamma doses up to 7 Mrad(Si). After 7Mrad(Si) gamma irradiation, an increase of base current (lb) is observed, the change is thought to be mainly due to the reduction of the effective minority carrier lifetime (τ) in the n-type...
A numerical model for 4H-SiC Schottky barrier diode (SBD) is proposed in this paper and the breakdown behaviors are achieved. The influences of the surface charge (Qs) on the breakdown characteristic of 4H-SiC SBD with different planar terminations, including junction termination extension (JTE) and field plate (FP) assisted JTE are calculated and investigated in detail.
An array of TLM(transfer length method) test patterns is formed on N-wells created by P+ ion implantation into Si-faced p-type 4H-SiC epilayer. The Ge+ ion implantations are used to form the intermediate semiconductor layer (ISL) of nickel-metal ohmic contacts to n-type 4H-SiC. The specific contact resistance pc as low as 4.23 times 10-5 Omegacm2 is achieved after annealing in N2 at 800 degC for 3...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.