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In this paper an analytic model for Ge/Si core/shell nanowire MOSFETs (NWFETs) is developed. First, the electrostatic potential and charge model are derived out from classical device physics. Then the drift-diffusion drain current model is obtained and verified by comparisons with the numerical simulation. The ballistic current model is obtained with the approximately described quantum-mechanical...
This paper investigates the transport properties of the silicon-germanium nanowire MOSFETs with core-shell structure by using a finite element numerical method for electronic structure, energy level, and channel current computation. Coupled Poisson's equation to Schrodinger's equation for electrostatics calculation and electron structure to current transport equation for channel current computation,...
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