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In order to identify the physical mechanisms behind the negative bias temperature instability (NBTI), the time-dependent defect spectroscopy (TDDS) has been recently proposed. The TDDS takes advantage of the fact that in nano-scaled devices only a handful of defects are present. As a consequence, degradation and recovery proceed in discrete steps, each of them corresponding to a charge capture or...
One of the most important degradation modes in CMOS technologies, the bias temperature instability (BTI) has been known since the 1960s. Already in early interpretations, charge trapping in the oxide was considered an important aspect of the degradation. In their 1977 paper, Jeppson and Svensson suggested a hydrogen-diffusion controlled mechanism for the creation of interface states. Their reaction–diffusion...
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