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Self-aligned double patterning (SADP) lithography is a leading technology for 10nm node Metal layer fabrication. In order to achieve successful decomposition, SADP-compliant design becomes a necessity. Spacer-Is-Dielectric (SID) is the most popular flavor of SADP with higher flexibility in design. This paper makes a careful study on the challenges for SID-compliant detailed routing and proposes a...
As technology continues to scale to 14nm node, Double Patterning Lithography (DPL) is pushed to near its limit. Triple Patterning Lithography (TPL) is a considerable and natural extension along the paradigm of DPL. With an extra mask to accommodate the features, TPL can be used to eliminate the unresolvable conflicts and minimize the number of stitches, which are pervasive in DPL process, and thus...
As minimum feature size keeps shrinking, and the next generation lithography (e.g, EUV) further delays, double patterning lithography (DPL) has been widely recognized as a feasible lithography solution in 20nm technology node. However, as technology continues to scale to 14/10nm, DPL begins to show its limitations and usually generates too many undesirable stitches. Triple patterning lithography (TPL)...
In today's system-on-chip designs, both digital and analog parts of a circuit will be implemented on the same chip. Parasitic mismatch induced by layout will affect circuit performance significantly for analog designs. Consideration of symmetry and common centroid constraints during placement can help to reduce these errors. Besides these two specific types of placement constraints, other constraints,...
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