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Molecular beam epitaxy-grown wafers are used to fabricate all ternary In0.52Al0.48As-In0.53Ga0.47As-In0.52Al0.48As double heterojunction bipolar transistors (DHBTs) with knee voltages of less than 1 V, showing no current blocking characteristic even at current densities of 200 kA/cm2. A set of wafers with a judicious combination of doping interface dipoles and composite collector designs were grown,...
State-of-the-art HBTs were designed, grown, fabricated and characterized in-house. The novelty of this process was the use of dimeric phosphorus generated from a Gallium Phosphide (GaP) decomposition source, which permitted growth at a fairly low temperature (420degC) while conserving extremely high quality materials. A self-aligned transistor with an emitter area of 5times5 mum2 demonstrated a low...
A low-power (~400 mW) high-speed (2-4 GS/s) 4-bit analogue-to-digital converter (ADC) based on InP/InGaAs heterojunction bipolar transistors (HBT) has been designed and simulated. The technology utilised two novel developments. Firstly stoichiometric conditions permitted growth at a relatively low temperature (420degC) while conserving extremely high-quality materials. Secondly dimeric phosphorus...
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