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In this paper, we report the low-frequency noise characterization of CVD -grown Graphene FETs (GFET). Low-frequency measurements indicate a dominant contribution of 1/f noise in the drain current noise source. A quadratic dependence of the drain current-noise on drain current is observed. An overall comparison between different geometries of the two generations of the CVD GFETs is shown in terms of...
In this paper, we report a qualitative study on the performances of Graphene on SiC FETs from pulsed measurements as a function of temperature variation, reflecting on the process quality of the graphene FETs. Currents and transconductances in both pulsed and DC measurements as a function of temperature in the 25°C to 75°C range do not show any significant variation which indicates a trap-free interface...
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