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In this study, OES (Optical emission spectrometer) was used to diagnose the variations of plasma species. QMS (Quadrupole mass spectrometry) was utilized to examine the concentration of free radicals in plasma. The epitaxial silicon thin film was deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD). The film properties related to thickness and crystallinity were investigated...
In this study, the intrinsic hydrogenated amorphous silicon oxide (a-SiOx:H) thin films were prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). High density plasma of ECR-CVD has many advantages: (1) faster deposition rate, (2) no electrode contamination, (3) low ion bombardment. The process parameters effect on a-SiOx:H thin films such as dilution ratio was investigated...
Hydrogenated microcrystalline silicon (μc-Si:H) thin films have been grown on glass substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at a low temperature of 180 °C. We investigate the influence of hydrogen dilution ratio (H2/SiH4) and working pressure on structural properties as deposition rate, crystallinity, and hydrogen content of the μc-Si:H. It is found that with...
Here we discuss the design, fabrication, and simulation of ultrathin film n-i-p a-Si:H solar cells incorporating light trapping plasmonic back reflectors which exceed the performance of n-i-p cells on randomly textured Asahi substrates. The periodic patterns are made via an inexpensive and scalable nanoimprint method, and are structured directly into the metallic back contact. Compared to reference...
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