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Nitride technologies are proposing a large variety of active devices to address high-power modules, but also robust low-noise receivers at high frequencies. High Electron Mobility Transistors (HEMT) are essentially developed on AlGaN/GaN heterostructure, but InAlN/GaN alternative seems very promising due to lattice matched layers (using 17% of In content) at the interface between layers where the...
Nitride technologies are proposing a large variety of active devices to address high-power modules, but also robust low-noise receivers at high frequencies. High Electron Mobility Transistors (HEMT) are essentially developed on AlGaN/GaN heterostructure, but InAlN/GaN alternative seems very promising due to lattice matched layers (using 17% of In content) at the interface between layers where the...
We report on the development of a 0.15µm gate length InAlN/GaN HEMT on SiC substrate technology for applications in K and Ka-Bands. Measurements results of pulsed I–V, S-parameters, load-pull and RF noise figure are presented. Devices exhibit a maximum DC transconductance of 350mS/mm and Idss of 0.95A/mm. Cut-off frequencies FT and Fmag of 45GHz and 100 GHz are reached. Load-pull power measurements...
The microwave noise parameters measured on AlInN/GaN HEMTs devices with different gate length values are presented in this paper. 0.15-μm HEMTs achieve a maximum current density of 700 mA/mm at VGs = 0 V and a measured extrinsic transconductance of 350 mS/mm. The current gain cutoff frequency and the maximum oscillation frequency are 40 GHz and 70 GHz, respectively. At 10 (20) GHz, the device exhibits...
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