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In this research, a nitride light‐emitting diode (LED) fabricated on an electroplated Cu substrate can be removed from a GaN/sapphire (Eco‐GaN) template by conducting the chemical lift‐off (CLO) process using an AlN/strip‐patterned‐SiO2 intermediate sacrificial layer. The regrowth GaN epilayer deposited on AlN/patterned SiO2/Eco‐GaN can achieve a high crystal quality via the epitaxial lateral overgrowth...
In this study, a nitride light-emitting diode (LED) with an electroplated Cu substrate was detached from a GaN/sapphire (Eco-GaN) template by chemical lift-off (CLO) using an AlN/strip-patterned-SiO2 intermediate sacrificial layer. To etch the patterned SiO2 and AlN layers, the HF and 80°C-KOH solutions were used, respectively. Moreover, a highly lateral etching rate of 0.5 um/hr was obtained as the...
In this study, a nitride light-emitting diode (LED) with an electroplated Cu substrate was detached from a GaN/sapphire (Eco-GaN) template by chemical lift-off (CLO) using a Ga 2 O 3 sacrificial layer. To etch the Ga 2 O 3 sacrificial layer, HF solution was used. In addition, a highly lateral etching rate of 70 μm/h was obtained as the etching treatment was performed...
In this study, GaN-based light emitting diodes (LEDs) were prepared on the cone-shaped patterned sapphire substrates (PSSs) by metal-organic chemical vapor deposition. To improve the epilayer quality and device performance of LEDs, the PSSs were further wet etched to form the modified top-tip cone shapes. With increasing the wet etching time to 3 min, the LED grown on the cone-shaped PSS has 53% and...
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