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We describe an in-situ method for inhibiting surface roughening during the thermal removal of the GaAs native oxide layer based on a thin sacrificial GaAs film deposited on top of the native oxide layer prior to sample heating. The required thickness of the sacrificial film is calculated to be of the order of 5 nm, fitting well with the experimental results. Atomic force microscopy and reflection...
An in situ method for inhibiting surface roughening during the thermal removal of the silicon native oxide layer is explored and developed. The method entails depositing a thin sacrificial silicon film at low temperature directly exterior to the native oxide, following which the sample is heated such that the native oxide preferentially reacts with the sacrificial film reducing wafer etching. The...
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