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A comprehensive investigation for the structural and electrical influences of via-last through silicon via (TSV) process on the 0.18-μm MOSFETs has been proposed in this work. The well-isolated TSVs don't affect the threshold voltages and drain currents in terms of the MOSFET distances to the TSVs, the size of the TSVs, the configuration of TSVs, and the positions of MOSFETs by the TSVs. Over-wafer...
A novel approach to the control of resistance in a Ti/SiO2/Si structure is demonstrated by use of a laser via a phenomenon referred to as the bipolar‐resistance effect (BRE). The most significant features of this BRE are an excellent spatial sensitivity and a large change ratio in resistance as the laser moves along the surface of the structure.
The porous silicon (PS), decorated by Au nanoparticles (NPs) possessing strong localized-surface-plasmon (LSP) resonance, are prepared by conventional anodization method. Luminescence properties are studied systematically and an approximately ten-fold enhancement of photoluminescence has been observed with the decoration of Au NPs, which is mainly due to the resonance coupling between the LSP of Au...
The bonding possibility of gold layers was investigated at 25~200degC in wafer scale using a surface activated bonding (SAB) method. The interconnections of Si-to-Si and Si-to-PZT substrates were confirmed using different thickness of gold layers. The influence of surface roughness, vacuum condition, wafer temperature and rolling was studied. The bonded samples were observed using a scan acoustic...
Fluorinated organic/inorganic composite pariticles is synthesized by compounding aminosilane (N-beta-aminoethyl)-gamma-aminopropyl trimethoxy silane or N-(beta-aminoethyl)- gamma-aminopropyl methyldimethoxy silane and perfluorinated octyl sulfonic acid fluoride. The structure and properties of products are characterized by FTIR ,1HNMR, TG/DTA, Mastersizer analysis and contact angle, the synthesized...
The bonding possibility of Si-Si/Au-Au/Cu-Cu wafers is confirmed at room temperature using surface activated bonding method. The surface condition and the thickness of surface contamination of Si, Au and Cu are evaluated using X-ray photoelectron spectroscopy. Various parameters, such as vacuum pressure, bonding time, bonding load, and bonding temperature, are studied in Si-Si wafer bonding. In the...
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