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We report on several enhancements in silica microcavities fabrication, characterization and functionalization. A special emphasis is put on mode identification, which gives access to the fundamental mode in both microspheres and microtoroids and to functionalization by nanoemitters, which open the way to original low threshold lasers. A record value of a threshold of 40 nW has been demonstrated for...
We have studied the current transport and electro-luminescence mechanisms of four layers of Si oxide co-doped with Si nanoclusters and erbium ions. Electrical measurements have identified different conduction mechanisms in separate high-field and low-field regimes, including Poole-Frenkel hopping. In particular, hopping through the Si-ncl is evidenced by C-V measurements. We have also observed an...
Er doped nano-Si system has been optimised in terms of photoluminescence intensity and lifetime. Reduction of carrier absorption losses and increasing of the number of Er ions coupled to Si-nc (around 25%) have been achieved.
In this paper, the insertion losses, photoluminescence, lifetime and pump/probe measurements on Er-doped Si-rich silica layers have been carried out in this paper using rib-loaded waveguides.
The recent discovery of the efficient sensitizing action of silicon nanoclusters (Si-nc) toward Er3+ embedded in a SiO2 matrix has opened the field of several applications in integrated optoelectronic devices. In this configuration, the effective absorption cross section gains at least 3 orders of magnitude. Another rare earth ion (Nd3+) also presents an interest since its emission in the near infrared...
Erbium ions have been used as active ions in optical amplifiers because 1.54 mum luminescence due to 4I13/2 rarr4I15/2 4f transition is sharp and intrinsic almost independently of temperature and host matrix, and also corresponds with standard optical telecommunication window. In order to overcome the small absorption cross-section of Er ions, the Er sensitizer such as Yb3+ ions has been introduced...
A detailed study of the free carrier absorption losses at 1.5 mum has been performed on silicon-nanocrystal rib waveguides by pumping at 532 nm. At the highest photon flux, the measured losses were about 6 dB/cm. We demonstrate that the dynamics of the carrier absorption is that of the luminescence.
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