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A novel high-κ gate stack structure with HfON/SiO2 as dual tunneling layer (DTL), AlN as charge storage layer (CSL) and HfAlO as blocking layer (BL) is proposed to prepare the charge-trapping type of MONOS non-volatile memory device by employing in-situ sputtering method. The memory window, program/erase and retention properties are investigated and compared with similar gate stack structure with...
Hafnium oxide (HfO2) is successfully used as gate insulator for fabricating metal-insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled...
Pentacene-based organic thin-film transistor (OTFT) with HfO2 as gate dielectric is studied in this work. The HfO2 dielectric was prepared by RF sputtering at room temperature, and subsequently annealed in N2O or NH3 at 200degC. The OTFTs were characterized by IV measurement and 1/f noise measurement. The OTFTs show small threshold voltage and can operate at as low as 3 V. Results indicate that the...
A novel Schottky-diode hydrogen sensor with high-k material HfO2 as gate insulator has been fabricated and studied. The influences of hydrogen concentration and temperature on hydrogen-sensing performance of the device are investigated. Experimental results show that the sensor demonstrates high sensitivity, rapid and stable response, especially at a high operating temperature of 300degC. These sensing...
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