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Liquid silicon, a solution of hydrogenated polysilane, is attractive for fabrication of high-speed flexible electronics by printing of Si. We have formed location-controlled silicon grains as large as 3.5 μm by spin-coating of the liquid-Si and excimer laser crystallization with a long pulse duration (250ns). Single-grain silicon TFTs are fabricated on the grains and the carrier mobilities are 423...
Liquid silicon offers us an opportunity of fabricating TFTs using printed silicon, instead of printed organic materials. We have fabricated single-grain Si TFTs on location-controlled Si grains with laser crystallization of a-Si formed from spin-coated liquid Si. Si grains with a maximum grain diameter of 3.5 µm were positioned at predetermined sites. Mobilities for electrons and holes are 391 cm2...
A new mixed-valence Cu(I)–Cu(II) octanuclear cluster, [CuICuII(n-Pr2dtc)Cl2]2[Cu2II(n-Pr2dtc)2Cl2]2 (1) (n-Pr 2 dtc − =di-n-propyl-dithiocarbamate) with a dithiocarbamate derivative has been synthesized and structurally characterized. Complex 1 consists of a mixed-valence Cu(I)–Cu(II) tetranuclear unit and two chloride-bridged Cu(II) dinuclear units. The octanuclear cluster forms an...
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