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Understanding phase transitions of ultrathin metal silicides is crucial for the development of nanoscale silicon devices. Here, the phase transition of ultrathin (3.6 nm) Ni silicides on Si(100) substrates is investigated using an in situ synthesis and characterization approach, supplemented with ex situ transmission electron microscopy and nano‐beam electron diffraction. First, an ultrathin epitaxial...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by sputtering. Reduction in the leakage current and in the flatband voltage were observed when compared to SiO2 films thermally grown or deposited directly on 4H-SiC, indicating, respectively,...
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