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This study experimental demonstrated the plasmonic effects of Al-, In-, and Ag-nanoparticles (NPs) depositing on the silicon solar cells, respectively, according to external quantum efficiency and photovoltaic current-voltage. Efficiency enhancement of 22.68%, 20.88% and 17.10% for the cell with In-, Al- and Ag-NPs was obtained, compared to the reference cell.
The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 µs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized...
The photovoltaic performance enhancement of silicon solar cells depositing indium nanoparticles (In NPs) on TiO2 layer and capping an Al2O3 layer was demonstrated. The impressive performance enhanced was attributed to the In NPs broadband light scattering based on Al2O3/TiO2 antireflection. The optical reflectance, photovoltaic current-voltage, and external quantum efficiency were measured and compared...
We demonstrate MOS-structure silicon solar-cells using a biasing antireflective-ITO-electrode to enhance the photovoltaic performance. The enhancement of the short-circuit-current and conversion-efficiency was confirmed by the light-current-voltage and induced-junction-capacitance measurements when applied 0–2.5 V-biasing on ITO-electrode.
We demonstrate experimentally the improvement of the external quantum efficiency (EQE) and current-matching of the triple-junction GaAs-based solar cell using periodic-patterns incorporated with random nano-sized indium-nanoparticles plasmonics. The average EQE decreased of −9.8% in top-cell and increased of +2.4% in middle-cell were obtained as the solar cell with periodic-patterns random nano-size...
This paper demonstrate experimentally the top-cell external quantum efficiency (EQE) improving of the triple-junction GaAs-based solar cell using a SiO2-nanopillars/SiO2/TiO2 graded-index anti-reflection coating (GI-ARC). The reflectance and EQE of the solar cells with SiO2/TiO2 double-layer ARC and with SiO2-nanopillars/SiO2/TiO2 GI-ARC are measured and compared. The reflectance of cell with SiO2...
We demonstrate the enhanced performances of Si-solar-cells using the spin-on-film device-processes and Indium-nanoparticle plasmonics. The short-circuit-current of the cell with indium-nanoparticles-plasmonics increase by 56.03% (from 3.48 to 5.43 mA) is obtained, compared to the bare-solar-cell.
We report the increasing in average external quantum-efficiency (EQE) of 11% on the top-cell of GaAs-based triple-junction solar-cell due to current matching using a graded-index SiO2-nano-pillars sub-wavelength/SiO2/TiO2 AR-coating by CF4-RIE etching with Ag-nanoparticles mask.
We report high-efficiency single-junction GaAs Solar cells of 25.54% at one sun using a spin-on graded-index TiO2/SiO2 films. Improved in efficiency, from 19.19% to 25.54%, was obtained when cell without/with proposed graded-index TiO2/SiO2 AR-coating, respectively.
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