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A methodology to properly establish an accurate SOI FinFET compact model through SPICE simulator is presented. This compact model is implemented in Verilog-A to simulate the performance of RF circuits based on SOI FinFET technology. It predicts well static behavior of the transistor and circuit, as well as their small-signal RF behavior by modeling the intrinsic capacitances and also the effects of...
Modeling of the small-signal equivalent circuit of SOI FinFETs through SPICE simulations is presented. A compact model implemented in Verilog-A predicts well the DC characteristics of RF SOI FinFETs and allows the extraction of the intrinsic conductance, transconductance and capacitances at any selected operating point. The intrinsic small-signal equivalent circuit composed of those extracted lumped...
This work presents an analytical continuous compact model for FinFETs which is based on the doped Symmetrical Double Gate model. Our model covers a wide range of technological parameters including different doping concentrations from 1×1014 to 3×1018 cm−3, short channel effects (down to 80 nm) and high temperatures (up to 200°C). Recently, we have also implemented and validated it in a Verilog-A module...
We present a Verilog-A implementation of an Improved Charge Sheet Model (ICSM) for PD SOI MOSFETs. This model is a physical and continuous compact model for deep-submicron transistors focused in an accurate description of high order derivatives, in order to obtain good approximation of the harmonic distortion behavior. The implementation of the model, using Verilog-A language, allows analog circuit...
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