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Indium tin oxide (ITO) thin films for application in thin-film silicon solar cells with superior electrical and optical properties (resistivity ranging from 1.4 to 8.4×10 −4 Ωcm; transparency of >80%) have been investigated. ITO layers were deposited by radio-frequency (RF) magnetron sputtering process at different argon gas pressures and substrate temperatures ranging from room temperature...
Recent progress in GaN based high electron mobility transistors (HEMTs) has revealed them to be strong candidates for future high power devices at high frequency operation. In order to extract and utilize the favorable GaN material properties, however, there are still a lot of areas to be investigated. Among them the most important is to develop new processes, structure design and characterization...
Electrical properties of the ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices were investigated. Two different preparation techniques were used, electron beam evaporation (EBE) and pulsed laser deposition (PLD). The EBE contacts show more than 10-times lower specific contact resistance than those prepared by PLD. Characterization of the HFETs prepared yielded higher saturation drain current...
The aim of this work is to point on the electrical and optical properties of interdigital MSM photodetectors containing Si delta-doped In0.22Ga0.78As/GaAs QW in dependence of different QW depth under UD GaAs cap layer. For this purposes the delta-doped structure was bevelled. The I-V characteristics in dark and under illumination as well as time response dependence on cap layer thickness were measured...
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