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Recent progress in GaN based high electron mobility transistors (HEMTs) has revealed them to be strong candidates for future high power devices at high frequency operation. In order to extract and utilize the favorable GaN material properties, however, there are still a lot of areas to be investigated. Among them the most important is to develop new processes, structure design and characterization...
This contribution reports on properties and characterization of InAlN/GaN structures prepared by metal organic chemical vapour deposition (MOCVD) using secondary ion mass spectroscopy (SIMS). The SIMS revealed the vertical cross section of the InAlN/GaN sample structures on SiC substrate and also visualizes the different growth procedure results. The SIMS comparison of the structures shows the Al,...
Reliability of the AlGaN/GaN HFETs was investigated by applying a short-time (70 min) off-state stress: the drain voltage was 50 V and the channel was pinched off. Significant decrease of the drain current at the stressing conditions was observed. Simultaneously, a decrease of the gate currents was found. On the other hand, the transconductance and threshold voltage did not changed with the stressing...
The application of near-field imaging to optoelectronic devices and laser diodes provides subwavelength information on a device structure. The fiber tip used for near-field imaging can be used also as a local tunable optical source exciting a photocurrent in the near-field region of an investigated structure. We demonstrate the structure and layer properties of laser diodes based on triple GaAs quantum...
Electrical properties of the ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices were investigated. Two different preparation techniques were used, electron beam evaporation (EBE) and pulsed laser deposition (PLD). The EBE contacts show more than 10-times lower specific contact resistance than those prepared by PLD. Characterization of the HFETs prepared yielded higher saturation drain current...
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