The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, the floating body effect (FBE) is experimentally investigated on triple gate n-channel Bulk FinFETs for 1T-FBRAM (1 transistor Floating Body Dynamic Random Access Memory) application. A difference between the Direct Current (DC) and the Alternating Current (AC) measurements corresponding with the real memory operation is shown. The large hysteresis under DC measurement related to floating...
The dependence of the activation energy on the electric field is investigated in extensionless (underlap) UTBOX FDSOI applied as a single transistor floating body RAM. It was found that with the same gate stack it is possible to extract two different activation energies when the electric field in the hold condition is different. Higher barrier lowering induced by elevated electric field implies in...
A single transistor 1T-DRAM, also called Floating-Body RAM cell (FBRAM) makes use of the transistor floating body as a charge storage node. Nowadays, it has become of high interest because it overcomes the integration problems associated with the capacitor of the conventional 1T/1C DRAM. In order to improve the retention time and sense margin, the parasitic BJT (Gen2) programming shows the best performance...
One transistor Floating Body RAM (1T FBRAM) has been thoroughly investigated as a potential candidate to replace the conventional DRAM, which is approaching the scaling limits at 20nm node [1–6]. 1T FBRAM offers better scalability, reduced process complexity and better compatibility with CMOS logic technology. However, FBRAM can hardly satisfy 64ms tail bit retention requirement [7] due to limited...
This paper investigates the drain read bias impact on the FB-BRAM performance of Ultra Thin Buried Oxide (UTBOX) Fully Depleted Silicon On Insulator (FDSOI) devices. Both simulations and experimental results are used. Two read regimes are clearly observed. In the read regime at higher drain voltage, impact ionization is occurring and this result in a higher sense margin and a lower retention time...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.