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In this paper, a new surface potential based compact model for long channel fully depleted SOI MOSFET with lightly doped ultra-thin body is presented. The 1-D Poisson equation is solved using the appropriate boundary conditions, and a closed-form surface potential solution is proposed for the front and back surface potentials. Finally the model was compared to numerical simulations and a good agreement...
In this work, the interface coupling in short-channel Multiple-gate MOSFETs (MuGFETs) structures is modelled. Based on the solution of the 3D Laplace's equation, the short-channel subthreshold characteristics (Subthreshold current, Subthreshold Slope, Roll-off and DIBL) are calculated and compared to experimental data with an excellent agreement, and without the need of any fitting parameters. The...
This work presents an analytical explicit compact model for Ultra-Thin Body (UTB) SOI MOSFETs. It is a simplification of a previously published model for Asymetrical Double Gate MOSFETs with independent gate operation. Excellent agreements were obtained with both TCAD simulations and electrical measurements. The usefulness of the model for parameter extraction of state of the devices is also demonstrated.
Multiple-gate transistors are considered as very promising candidates for the 22 nm technological node. They are named Triple-gate FETs (TGFETs) when the gate controls three sides of the silicon body; if the channel etch process step penetrates in the Buried Oxide (BOX), the transistor is named Pi-gate FET. There is currently a strong need for compact models of such architectures, in order to evaluate...
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