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This work demonstrates the first fabricated macro-level RRAM-based nonvolatile SRAM (nvSRAM) that use a new 8T2R (Rnv8T) cell to achieve fast NVM storage and low VDDmin read/write operations. The Rnv8T cell uses two fast-write low-current RRAM devices, 3D stacked over the 8T, to achieve low store energy with a compact cell area (1.6x that of a 6T cell). A 2T RRAM-switch provides both RRAM control...
This paper proposes a design of IT memory cells that utilizes the modulation of drain current by channel traps and offers these advantages: 1. capacitorless structure, 2. long data retention time, 3. excellent endurance characteristics, 4. low power consumption, 5. 3D integration compatibility.
A low-power and high-performance RFCMOS SoC GPS receiver is introduced in this paper. It is fabricated in a 0.11 mum process with 6.2times6.2mmz TFBGA package. The power consumption is 34 mW during tracking stage and 45 mW during acquisition stage. The tracking sensitivity is up to -165 dBm with the most competitive TTFF performance. This GPS receiver is designed for PND/GSM/CDMA handsets and is compatible...
The CMOS process moves into the sub-micron regime, low voltage circuit design techniques will be required for highly integrated wireless transceivers. The complementary CMOS VCO is a simple design topology for high frequency and low phase noise. However, it requires a high supply voltage due to the stacking of transistors. For operating at the low voltage, in this paper a modified complementary coupled-pair...
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