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In this paper the electrical performance of triangular trigate bulk FinFET at 20 nm has been optimized using Artificial Neural Network (ANN) and Genetic Algorithm (GA). For training the ANN a set of 42 samples with two inputs and four outputs was created by 3D TCAD numerical simulator using Drift Diffusion approach with Density Gradient Quantum Corrections model. The optimal value of fin height (Hfin)...
FinFETs are considered as superior alternative to conventional MOSFETs for short channels. Presence of gate on multiple sides helps in performance enhancement. In this work, we have investigated the impact of various process parameters like gate oxide thickness (Tox), aspect ratio of fin height (Hfin) to fin thickness (Wfin) on the performance of Tapered FinFETs for 20 nm gate length. This FinFET...
FinFET is the dominating technology for short-channel devices due to its better gate control over the flow of electrons. In this work, the temperature dependence of drain current (ID) and short channel effects of Bulk FinFET is observed. The FinFET showed ID variation with respect to temperature. The drain current and short channel effects like subthreshold swing (SS), drain induced barrier lowering...
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