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In this paper, we demonstrate an ultra-wideband MMIC Marchand balun that utilizes a two-layer benzocyclobutene (BCB) GaAs MMIC process with a total of 4 metal layers. This multi-metal technology is built upon a standard GaAs HEMT technology with full compatibility. The fabricated balun achieved an approximately 11:1 bandwidth from 2 to 22 GHz, with less than 3-degree maximum phase imbalance, and less...
In this paper a W-band oscillator using Wafer Level Packaging (WLP) technology is reported. To the best of the authors' knowledge this is the first oscillator using a stabilizing cavity resonator created through the use of WLP. By using WLP a cavity consisting of more than one substrate can be created. Since quality factor is directly proportional to volume, a cavity of larger volume will lend itself...
Scanning transmission electron micrographs were used to investigate the gate metal sinking effect in 0.15 mum GaAs PHEMT MMICs subjected to elevated temperature lifetesting. Gate metal sinking causes a decrease of the Schottky barrier height, therefore reducing the Schottky diode's forward turn-on voltage. The progressive gate metal sinking eventually leads to a drastic increase in the three-terminal...
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