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The high breakdown voltage AlGaN/GaN HEMTs with source-terminated field plate was firstly fabricated for high frequency and high power application, employing by CF4 plasma treatment for enhancement-mode (E-mode). The results showed that by adding the distance of gate to drain, LGD from 5 um to 15um, the breakdown voltage of the device was rapidly increased 350V, whose value is from 50V to 400V while...
This is the first report of a technique for inserting a thin Zr interlayer into a nickel film to improve the thermal stability of the silicide formed from this film. The sheet resistance of resulting Ni(Zr)Si film was lower than 2 Ω/□. X-ray diffraction and raman spectral analysis showed that only the silicides low resistance phase (NiSi), rather than high resistance phase (NiSi2), was present in...
A novel 150V-BCD technology by using 14um thick epitaxy based on 0.35um standard CMOS process has been developed for LCD backlighting application. In the whole process with 24 steps, HV circuit block, including VDNMOS and LDPMOS with double resurf principle, and LV block are integrated together. Advanced deep trench isolation (DTI) technology with the breakdown voltage above 150V is firstly in place...
The AlGaN/GaN HEMTs with source-terminated field plate was firstly fabricated, employing by CF4 plasma treatment for enhancement-mode (E-mode). The results showed that by adding LGD from 5 um to 15 um, the breakdown voltage of the device was rapidly increased 350 V, whose value is from 50 V to 400 V while the threshold voltage of the device, VTH stayed about 0.5 V by the technology of CF4 plasma modulating...
This paper will firstly analyze Ditian algorithm and Chi-fu Huang algorithm, pointing out the advantages and disadvantages for both of them, then propose a new algorithm called DSA combining the two algorithms, which can self-adapt its algorithm complexity and communication cost based on the density variation for the nodes in the network.
This paper presents the fabrication and experimental results of a bipolar transistor with self-aligned T-shaped electrode structure. The transistor with 0.4μm spacing between emitter and base contact and 4μm emitter-emitter pitch has been fabricated. It is shown that the transistor has 3W CW output power with 8dB gain and 40% collector efficiency at 4. 2 GHz. For oscillation application, the oscillation...
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