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The impact of temperature and precipitation to Nanjing manufacturing economy was analyzed by using TRANSLOG model. The results of model estimated by randge regression method show that the average boundary output elasticity of temperature and precipitation factor to the manufacturing undulation output value are −0.1813 and −0.0683 respectively, which means both of temperature and precipitation have...
The high breakdown voltage AlGaN/GaN HEMTs with source-terminated field plate was firstly fabricated for high frequency and high power application, employing by CF4 plasma treatment for enhancement-mode (E-mode). The results showed that by adding the distance of gate to drain, LGD from 5 um to 15um, the breakdown voltage of the device was rapidly increased 350V, whose value is from 50V to 400V while...
This is the first report of a technique for inserting a thin Zr interlayer into a nickel film to improve the thermal stability of the silicide formed from this film. The sheet resistance of resulting Ni(Zr)Si film was lower than 2 Ω/□. X-ray diffraction and raman spectral analysis showed that only the silicides low resistance phase (NiSi), rather than high resistance phase (NiSi2), was present in...
A novel 150V-BCD technology by using 14um thick epitaxy based on 0.35um standard CMOS process has been developed for LCD backlighting application. In the whole process with 24 steps, HV circuit block, including VDNMOS and LDPMOS with double resurf principle, and LV block are integrated together. Advanced deep trench isolation (DTI) technology with the breakdown voltage above 150V is firstly in place...
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