Search results for: Dong Myong Kim

Items from 1 to 20 out of 81 results

article

P‐30: Thermally Activated and Field‐Enhanced Diffusion of Dopants in a‐InGaZnO TFTs Under Circuit Operations and Correlation to Device Stabilities

Chang Il Ryoo, Tae Jun Yang, Hee Jun Lee, Jong-Ho Bae, more

SID Symposium Digest of Technical Papers > 53 > 1 > 1149 - 1152

The spatial distribution of the donor dopant and the source‐drain resistance (R_SD) in oxide Thin Film Transistor (TFT) for display backplane is usually considered to be determined by the device structure and the process. This work shows that the dopant concentration of lateral distribution of thermal equilibrium carrier concentration n₀(y) may vary dynamically depending on the operation conditions...

article

19‐3: Late-News Paper: Universal Method to Determine the Dynamic NBIS‐ and PBS‐induced Instabilities on Self‐aligned Coplanar InGaZnO Thin‐film Transistors

Jun Tae Jang, Hye Ri Yu, Geumho Ahn, Sung-Jin Choi, more

SID Symposium Digest of Technical Papers > 49 > 1 > 232 - 235

The method for dynamically calculating the NBIS‐ and PBS‐induced ΔV_T's is proposed based on experimentally extracted density‐of‐states and is demonstrated in top‐gate self‐aligned coplanar amorphous InGaZnO thin‐film transistors. The effect of illuminance as well as the bias‐dependence is successfully taken into account. Proposed method is potentially useful for the instability‐aware design of OLED...

article

Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques

Seong Kwang Kim, Jae-Phil Shim, Dae-Myeong Geum, Chang Zoo Kim, more

IEEE Transactions on Electron Devices > 2017 > 64 > 9 > 3601 - 3608

Defect less semiconductor-on-insulator (-OI) by a cost-effective and low-temperature process is strongly needed for monolithic 3-D integration. Toward this, in this paper, we present a cost-effective fabrication of the indium gallium arsenide-OI structure featuring the direct wafer bonding (DWB) and epitaxial lift-off (ELO) techniques as well as the reuse of the indium phosphide donor wafer. We systematically...

article

21‐4: Distinguished Paper: Experimental Decomposition of the Positive Bias Temperature Stress‐induced Instability in Self‐aligned Coplanar InGaZnO Thin‐film Transistors and its Modeling based on the Multiple Stretched‐exponential Functions

Dae Hwan Kim, Sungju Choi, Juntae Jang, Hara Kang, more

SID Symposium Digest of Technical Papers > 48 > 1 > 298 - 301

Decomposition of the positive gate‐bias temperature stress (PBTS)‐induced instability into contributions of distinct mechanisms is experimentally demonstrated in top‐gate self‐aligned coplanar amorphous InGaZnO thin‐film transistors and validated by reproducing the PBTS time‐evolution of I‐V characteristics through the TCAD simulation into which the extracted density‐of‐states and charge trapping...

article

Experimental decomposition of the positive bias temperature stress‐induced instability in self‐aligned coplanar InGaZnO thin‐film transistors and its modeling based on the multiple stretched‐exponential functions

Dae Hwan Kim, Sungju Choi, Juntae Jang, Hara Kang, more

Journal of the Society for Information Display > 25 > 2 > 98 - 107

Decomposition of the positive gate‐bias temperature stress (PBTS)‐induced instability into contributions of distinct mechanisms is experimentally demonstrated at several temperatures in top‐gate self‐aligned coplanar amorphous InGaZnO thin‐film transistors by combining the stress‐time‐divided measurements and the subgap density‐of‐states (DOS) extraction. It is found that the PBTS‐induced threshold...

article

Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors

Heesung Lee, Junyeap Kim, Jaewon Kim, Seong Kwang Kim, more

IEEE Electron Device Letters > 2017 > 38 > 5 > 584 - 587

Amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are investigated for a possible application to infrared (IR) photodetector through subgap density-of-states over the forbidden bandgap. The origin of the sub-bandgap(

${h}\nu < {E} _{g})$

photo-response in a-IGZO TFTs is due to optically pumped electrons from the photo-responsive subgap states (

${E} _{C}$

${E} _{\textit {ph}}{<}{E}_{t}{<}{E}_{F})$

...

article

Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors

Sungju Choi, Juntae Jang, Hara Kang, Ju Heyuck Baeck, more

IEEE Electron Device Letters > 2017 > 38 > 5 > 580 - 583

We propose an experimental method to decompose the positive gate-bias stress (PBS)-induced threshold voltage shift (

$\Delta {V}_{\mathsf {th}})$

of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) into the contributions of distinct degradation mechanisms. Top-gate self-aligned coplanar structure TFTs are used for this letter. Stress-time-divided measurements, which combine the subgap density-of-states...

article

Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques

Heesung Lee, Jaewon Kim, Sungju Choi, Seong Kwang Kim, more

IEEE Electron Device Letters > 2017 > 38 > 2 > 199 - 202

We report a model for the band-bending effect (BBE) for improved extraction of the subgap density-of-states (DOS) in amorphous semiconductor thin-film transistors (TFTs). In previous works, the potential (

$\psi $

(

${x}$

)) across the amorphous active layer was assumed to be the same as the surface potential (

$\psi _{\mathrm {S}}$

) over the active layer without the BBE. Due to the distributed DOS...

chapter

Cost-effective fabrication of In_0.53Ga_0.47As-on-insulator on Si for monolithic 3D via novel epitaxial lift-off (ELO) and donor wafer re-use

Seong Kwang Kim, Jaephil Shim, Dae-Myeong Geum, Chang Zoo Kim, more

2016 IEEE International Electron Devices Meeting (IEDM) > 25.4.1 - 25.4.4

2016 IEEE International Electron Devices Meeting (IEDM)

Defect-less semiconductor-on-insulator (-OI) by a cost-effective and low temperature process is strongly needed for monolithic 3D (M3D) integration. Toward this, in this paper, we present a cost-effective fabrication of the InGaAs-OI structure featuring the direct wafer bonding (DWB) and the epitaxial lift-off (ELO) techniques as well as the re-use of the InP donor wafer. We systematically investigated...

article

Hybrid Open Drain Method and Fully Current-Based Characterization of Asymmetric Resistance Components in a Single MOSFET

Jaewon Kim, Heesung Lee, Seong Kwang Kim, Junyeap Kim, more

IEEE Transactions on Electron Devices > 2016 > 63 > 11 > 4196 - 4200

Separate extraction of source (

$R_{\mathrm{ S}})$

from drain resistance (

$R_{\mathrm{ D}})$

is important in the systematic modeling of electrical characteristics and investigation of physical mechanism related to the performance and reliability in MOSFETs and their integrated circuits. We report a hybrid open drain method (ODM), as a fully current-based characterization technique, for a comprehensive...

article

Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electronics

Jinsu Yoon, Juhee Lee, Bongsik Choi, Dongil Lee, more

Nano Research > 2017 > 10 > 1 > 87-96

Transient electronics represent an emerging class of technology comprising materials that can vanish in a controlled manner in response to stimuli. In contrast to conventional electronic devices that are designed to operate over the longest possible period, transient electronics are defined by operation typically over a short and well-defined period; when no longer needed, transient electronics undergo...

chapter

Comparative study of piezoresistance effect of semiconducting carbon nanotube-Polydimethylsiloxane nanocomposite strain sensor

Meehyun Lim, Jieun Lee, Dae Hwan Kim, Dong Myong Kim, more

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) > 755 - 758

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

We comparatively study the performance of flexible strain sensors based on carbon nanotube (CNT)-Polydimethylsiloxane (PDMS) nanocomposites with different concentrations of CNTs. The semiconducting CNTs with high intrinsic gauge factor were employed for the sensor fabrications. A percolation network with a lower CNT concentration shows higher resistance changes in response to applied strains compared...

article

The $\gamma $ -Fe₂O₃ Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning

Kyung Min Lee, Jun Tae Jang, Yoon-Jae Baek, Hara Kang, more

IEEE Electron Device Letters > 2016 > 37 > 8 > 986 - 989

The memristor ratioed logic (MRL)-based NAND operation is demonstrated using a combination of two Ag/

$\gamma $

-Fe₂O₃ nanoparticles assembly/Pt memristors in series with one CMOS inverter. This letter finds the MRL operational frequency to be restricted due to an inconsistency between SET and RESET and by an imbalance of the resistance between the two memristors. It is also shown that optical tuning...

article

Fully subthreshold current-based characterization of interface traps and surface potential in III–V-on-insulator MOSFETs

Seong Kwang Kim, Jungmin Lee, Dae-Myeong Geum, Min-Su Park, more

Solid-State Electronics > 2016 > 122 > C > 8-12

We report characterization of the interface trap distribution (D_it(E)) over the bandgap in III–V metal–oxide–semiconductor field-effect transistors (MOSFETs) on insulator. Based only on the experimental subthreshold current data and differential coupling factor, we simultaneously obtained D_it(E) and a nonlinear mapping of the gate bias (V_GS) to the trap level (E_t) via the effective surface potential...

chapter

Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND flash memory

Bongsik Choi, Sang Hyun Jang, Jinsu Yoon, Juhee Lee, more

2016 IEEE Symposium on VLSI Technology > 1 - 2

2016 IEEE Symposium on VLSI Technology

A fast charge loss within a few seconds, which is referred to as early retention, was observed in tube-type 2y word-line stacked 3-D NAND flash memory for the first time, and the origin of the early retention was comprehensively evaluated. Using a fast-response pulse I–V system, the early retention characteristics from microseconds to seconds were thoroughly investigated, and the correlations with...

article

The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In–Ga–Zn–O Thin Film Transistors Under Current Stress

Sungju Choi, Hyeongjung Kim, Chunhyung Jo, Hyun-Suk Kim, more

IEEE Electron Device Letters > 2015 > 36 > 12 > 1336 - 1339

Thin-film transistors using In–Ga–Zn–O (IGZO) semiconductors were evaluated under positive bias stress with different gate and drain voltages (

$V_{\textrm {GS}}$

and

$V_{\textrm {DS}}$

, respectively). The transfer characteristics with respect to stress time were examined, focusing on the threshold voltage (

$V_{T}$

) values obtained when the source and drain electrodes are interchanged during...

article

A bottom-gate silicon nanowire field-effect transistor with functionalized palladium nanoparticles for hydrogen gas sensors

Bongsik Choi, Jae-Hyuk Ahn, Jieun Lee, Jinsu Yoon, more

Solid-State Electronics > 2015 > 114 > C > 76-79

The highly sensitive operation of a bottom-gate silicon nanowire (SiNW) field-effect transistor (FET)-based hydrogen (H₂) sensor is demonstrated by controlling the working regime of the sensor. It is observed that the deposition of palladium (Pd) nanoparticles on the SiNW surface for the selective absorption of H₂ can result in a significant enhancement of the electrostatic properties, such as the...

article

Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress

Jungmin Lee, Sungju Choi, Seong Kwang Kim, Sung-Jin Choi, more

IEEE Electron Device Letters > 2015 > 36 > 10 > 1047 - 1049

Hump characteristics of n-channel amorphous indium-gallium–zinc-oxide (a-InGaZnO) thin-film transistors (TFTs) after positive gate and drain bias stress (PGDBS) are investigated. With the increase of the PGDBS time, we observed not only a shift of the threshold voltage (

$V_{T}$

) but also a generation of the hump in the transfer characteristics. The hump is caused by the localized trapping of electrons...

article

Bias-Dependent Effective Channel Length for Extraction of Subgap DOS by Capacitance–Voltage Characteristics in Amorphous Semiconductor TFTs

Hyunjun Choi, Jungmin Lee, Hagyoul Bae, Sung-Jin Choi, more

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2689 - 2694

Bias-dependent effective channel length [

$L_{\mathrm {eff}}(V_{G})]$

is empirically modeled with a channel conduction factor [

$\alpha (V_{G})]$

for a consistent capacitance–voltage (

$C$

–

$V$

) characterization of the intrinsic subgap density of states (DOS) over the bandgap with the sub-bandgap photoresponsive

$C$

–

$V$

technique in amorphous thin-film transistors. We define the effective...

article

A Study on the Degradation of In-Ga–Zn-O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution

Sungju Choi, Hyeongjung Kim, Chunhyung Jo, Hyun-Suk Kim, more

IEEE Electron Device Letters > 2015 > 36 > 7 > 690 - 692

Thin-film transistors using In-Ga–Zn-O (IGZO) semiconductors were evaluated under current stress by applying positive voltages to the gate and drain electrodes. Initially, the transfer characteristics exhibit identical threshold voltages (

$V_{T})$

when the source and drain electrodes are interchanged during measurement (forward and reverse

$V_{\mathrm {DS}}$

sweep). However, as stress time increases,...

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INFONA - science communication portal

Search results for: Dong Myong Kim

P‐30: Thermally Activated and Field‐Enhanced Diffusion of Dopants in a‐InGaZnO TFTs Under Circuit Operations and Correlation to Device Stabilities

19‐3: Late-News Paper: Universal Method to Determine the Dynamic NBIS‐ and PBS‐induced Instabilities on Self‐aligned Coplanar InGaZnO Thin‐film Transistors

Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques

21‐4: Distinguished Paper: Experimental Decomposition of the Positive Bias Temperature Stress‐induced Instability in Self‐aligned Coplanar InGaZnO Thin‐film Transistors and its Modeling based on the Multiple Stretched‐exponential Functions

Experimental decomposition of the positive bias temperature stress‐induced instability in self‐aligned coplanar InGaZnO thin‐film transistors and its modeling based on the multiple stretched‐exponential functions

Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors

Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors

Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques

Cost-effective fabrication of In_0.53Ga_0.47As-on-insulator on Si for monolithic 3D via novel epitaxial lift-off (ELO) and donor wafer re-use

Hybrid Open Drain Method and Fully Current-Based Characterization of Asymmetric Resistance Components in a Single MOSFET

Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electronics

Comparative study of piezoresistance effect of semiconducting carbon nanotube-Polydimethylsiloxane nanocomposite strain sensor

The $\gamma $ -Fe₂O₃ Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning

Fully subthreshold current-based characterization of interface traps and surface potential in III–V-on-insulator MOSFETs

Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND flash memory

The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In–Ga–Zn–O Thin Film Transistors Under Current Stress

A bottom-gate silicon nanowire field-effect transistor with functionalized palladium nanoparticles for hydrogen gas sensors

Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress

Bias-Dependent Effective Channel Length for Extraction of Subgap DOS by Capacitance–Voltage Characteristics in Amorphous Semiconductor TFTs

A Study on the Degradation of In-Ga–Zn-O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution

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