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This study presents a novel CMOS-MEMS 3-axis accelerometer design using TSMC 0.18µm 1P6M CMOS process. Thus, the footprint size of 3-axis accelerometer is significantly reduced to 400×400µm2 by the single proof-mass design, Due to the novel fully-differential gap-closing sensing electrode design in all three sensing directions, the sensitivities of 3-axis accelerometer are improved. Moreover, by means...
The effect of flatband-voltage reduction [roll-off (R-O)], which limits fabrication options for obtaining the needed band-edge threshold voltage values in transistors with highly scaled metal/high- k dielectric gate stacks, is discussed. The proposed mechanism causing this R-O phenomenon is suggested to be associated with the generation of positively charged oxygen vacancies in the interfacial SiO...
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