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In this paper, we report a fully analog three-way sequential power amplifiers (SPA) using 10W GaN HEMTs. The proposed three-way SPA delivers Psat of 39∼40 dBm over 2.45–2.8 GHz covering a 15.4% fractional bandwidth. The three-way SPA includes a 2:1:1 multi-way splitter, a carrier amplifier, two peaking amplifiers, and a 7:1.5:1.5 combiner for power combining. The measured three-way SPA shows 41% to...
Green and flexible digital transmitter is envisioned as the evolving trend for future cellular base station, which is required to operate with multi-standard and multi-band radio signals. To energy efficiently amplify the spectrum-efficient modulated signals with high peak-to-average power ratio (PAPR>10 dB) is challenging. Compared with traditional analog solutions using Doherty Power Amplifier...
GaN integrated switch-mode power amplifier with high output power, fast and efficient switching characteristic has been considered as a very suitable technology for implementing advanced digital radio transmitter. It is featured of energy-efficient and re-configurable operation. This paper reviews the recently reported works in this promising research topic. Key technical challenges on the device...
In this paper, we report a two-way sequential power amplifier (SPA) using GaN HEMTs. The proposed fully analog SPA delivers Psat of approximately 40dBm over 2–3 GHz covering 40% fractional bandwidth. The design consists of a 3dB input coupler, a main amplifier, a peak amplifier, and a 10dB output coupler for power combining. After proper designing and optimizing these critical wideband couplers in...
This paper stresses on critical requirements for characterizing device inherent intermodulation distortion (IMD) products in power HEMTs for 3G wideband applications. An accurate broadband RF testbench is essential for reliable nonlinearity measurements. With the optimized IMD characterization testbench, the reproducibility of sweet-spot behavior in GaAs and GaN HEMT technologies has been investigated...
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