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The realization of a quantum network requires linking distant nodes via a quantum channel. To realize this link, it seems natural to use single photons to transmit or to share the quantum state of a static qubit. In this direction, a trapped ion in cavity has already been used to perform ion-photon entanglement [1] and ion-to-photon state mapping [2].
In this letter, we show that conventional III–V MOSFETs with moderate/high In content channels (In0.53Ga0.47As or In0.70Ga0.30As) at scaled nodes are incompatible with mobile SoC designs, which often operate at intermediate/high ${V_{{\mathrm {dd}}}}$ (0.7 V to $\geq 1$ V) to achieve high frequency including during burst-mode. The incompatibility is due to conventional III–V FETs having too small...
Irradiation of intense and ultrashort laser pulses on dielectric surface is calculated in real-time using first-principles time-dependent density functional theory. It is found that calculated energy distribution transferred from laser pulse to electrons in dielectrics explains measured threshold and depth of laser-induced damage.
This paper presents a new microfabrication method for surface ion traps and experimental results with trapped ions. Fabricating ion trap chips is a very formidable task because the top electrodes are vertically spaced more than 10 µm from the bottom electrodes with an indented dielectric layer in the middle. Previous ion traps were fabricated using TEOS timed etch or tungsten sacrificial etch techniques...
The impact of Chip-Package Interaction (CPI) which is caused by the mismatch in the coefficient of thermal expansion (CTE) between substrate and chip in a Flip Chip Ball Grid Array (FCBGA) on the mechanical reliability of Cu/Ultra low-k in a larger die was investigated using Finite Element Analysis (FEA). In order to associate the deformation and thermal stresses in FCBGA with those in the Cu/Ultra...
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