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By depositing a PMMA (poly(methyl methacrylate)) layer on top of an evaporated layer of ZrO2, the leakage has 4 orders of magnitude reducing compared with bare ZrO2 layer. Low roughness of PMMA/ZrO2 surface produces a high quality interface between the organic semiconductor and the combined insulator, thus the device has a significant improvement in performance. The typical field effect mobility,...
Copper phthalocyanine (CuPc) thin-film transistors (TFTs) have been fabricated using 400 nm polyimide (PI) cured at 250degC as gate dielectric. The root-mean square surface roughness of PI films is 30 Aring. An individual bottom gate, staggered structure was selected to study the device performance. The devices showed p-type electrical characteristics with field-effect mobility, threshold voltage...
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