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High mobility III-V compound semiconductors are the most attractive candidates who could provide enhanced performance for future logic applications. Even so, people still hesitate to accelerate III-V materials entering into Si CMOS world. To relieve people's concerns, the integration of thin III-V on Si and Si transistor-like technique or architecture should be demonstrated.
In this paper, an H-plane horn antenna is designed and studied in substrate integrated waveguide (SIW) structures. The SIW horn input reflection coefficient and output radiation at 60 GHz have been simulated for a GaAs substrate of 100 um and 300 um thick, respectively. Microstrip line to SIW transition is also designed for possibly realization of the antenna into commercial GaAs MMIC circuit board.
Vertical GaN based Light Emitting Diodes (VLED) on metal alloy base were realized and characterized for solid state lighting application. An operating voltage of less than 2.9 Voltage from a high efficiency and high power blue LED was achieved. And, an efficiency of more than 120 lumens/watt from a white LED was achieved also. The dissipate heat more effectively than conventional and flip-chip LEDs,...
We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high...
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