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A 1-GHz high electron mobility transistor (HEMT) chip set for a cryogenic pseudorandom number generator subsystem that has enhancement/depletion (ED) direct-coupled FET logic (DCFL) circuits and operates at liquid nitrogen temperature is described. Using HEMT circuitry at cryogenic temperatures has several advantages. The DC characteristics of the HEMT are improved. The resistance of interconnecting...
This letter proposes a new feasible device structure of an enhancement-mode GaAs deep-depletion m.o.s.f.e.t. as an attractive alternative to the junction-gate f.e.t.s and describes its microwave properties. The device has been fabricated on a high-resistance epitaxial n?-layer by simple readily available technology without requiring the sophisticated control of the channel thickness needed for the...
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