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The analysis of the ESD protection devices supported by the advanced 2-D and 3-D mixed mode electro-thermal device and circuit simulation is presented. The influence of structure geometry on the electrical properties of ESD devices is studied. The optimization of the structure geometry allows down-shrink of the ESD protection device dimensions with further improvement of its main electrical parameters.
The paper deals with characterization of various MagFET structures in alternating magnetic field in frequency range from 10 Hz to 10 kHz. 3D numerical simulation of MagFET structures has been used to investigate influence of MagFET geometry to the magnetic field sensitivity. Rectangle shaped structures of various dimensions were fabricated in standard 1mum two metal CMOS technology. MagFET devices...
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