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Traditional IC scaling is becoming increasingly difficult at the 22 nm node and beyond. Dealing with these challenges increase product development cycle time. For continued CMOS scaling, it is essential to start design explorations in new process nodes as early as possible. Such an effort requires having Predictive Technology Models, which bridge technological and design practices, in order to assess...
The challenges of deriving early-adopter competitive advantage, even with fabless access to process technology, through leveraging features offered by the advanced, and possibly disruptive, process technologies in real SoC products, are outlined. A structured methodology for addressing these challenges, and bridging the gap between process and design, sufficiently early in the development cycle to...
As CMOS technology is scaled beyond 45 nm, SOC/SiP design for wireless chips is increasingly constrained by fundamental technology limits, resulting in challenges including parametric variability, leakage, active power, signal integrity, and diminished performance improvement. New materials and innovative device structures are needed to extend CMOS scaling and integrate disruptive "More than...
In this paper, a new version of PTM down to 32nm node for low power design has been developed. Predictive Technology Model (PTM) for nanoscale CMOS was first developed in 2000. It was widely used in early stage design exploration, providing key insights into advanced process and design research. PTM for high performance design was further improved to achieve a more physical prediction by identifying...
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